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| NTE243 (NPN) & NTE244 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general-purpose amplifier and low-frequency switching applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 4A D Collector-Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA D Low Collector-Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 4A = 3V Max @ IC = 8A D Monolithic Construction with Built-In Base-Emitter Shunt Resistors Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.571W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.78C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter SustainingVoltage Collector Cutoff Current VCEO(sus) IC = 100mA, IB = 0, Note 1 ICEO ICEX Emitter Cutoff Current IEBO VCE = 40V, IE = 0 VCE = 80V, VBE(off) = 1.5V VCE = 80V, VBE(off) = 1.5V, TA = +150C VBE = 5V, IC = 0 80 - - - - - - - - - - 0.5 0.5 5.0 2.0 V mA mA mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics (Note 1) DC Current Gain hFE VCE(sat) VBE(sat) VBE(on) hfe |hfe| VCE = 3V, IC = 4A VCE = 3V, IC = 8A Collector-Emitter Saturation Voltage IC = 4A, IB = 16mA IC = 8A, IB = 80mA Base-Emitter Saturation Voltage Base-Emitter ON Voltage Dynamic Characteristics Small-Signal Current Gain Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio Output Capacitance NTE243 NTE244 VCE = 3V, IC = 3A, f = 1kHz VCE = 3V, IC = 3A, f = 1MHz 300 4.0 - - - - MHz IC = 8A, IB = 80mA VCE = 3V, IC = 4A 750 100 - - - - - - - - - - 18000 - 2.0 3.0 4.0 2.8 V V V V Symbol Test Conditions Min Typ Max Unit Cob VCB = 10V, IE = 0, f = 0.1MHz - - - - 200 300 pF pF Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% NTE243 C B .350 (8.89) .135 (3.45) Max .875 (22.2) Dia Max Seating Plane E .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) NTE244 .215 (5.45) C B .430 (10.92) .188 (4.8) R Max E Base .525 (13.35) R Max Collector/Case |
Price & Availability of NTE244
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